Multilayer low reflectivity hard mask and process therefor

摘要: A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The be utilized as hard mask forming various integrated circuit structures. to form gate stacks comprised of polysilicon and dielectric layer. photoresist is applied above the which include silicon oxynitride (SiON) rich nitride (SiRN).