MOSFET structure with multiple self-aligned silicide contacts
作者： Christian Lavoie , Kevin K. Chan , Kern Rim
DOI:
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摘要: A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts methods of fabricating the same are provided. The MOSFET at least one having a gate conductor including edge located on surface Si-containing substrate; first inner an is substantially aligned to transistor; second outer adjacent silicide. In accordance with present invention, has thickness greater than Moreover, resistivity lower
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