Carbon layer and method of manufacture
作者： Mark van Dal
DOI:
关键词: Nanotechnology 、 Substrate (electronics) 、 Graphene 、 Carbon layer 、 Materials science 、 Silicide 、 Epitaxy 、 Optoelectronics 、 Carbon 、 Metal 、 Layer (electronics)
摘要: A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing first metal on substrate, the substrate comprising carbon. silicide eptiaxially grown epitaxially growing also forming of over silicide. In an graphene, may be transferred to semiconductor further processing form channel within graphene.
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