Silicide MOSFET architecture and method of manufacture
作者： Mario M. Pelella , Simon S. Chan , Shankar Sinha
DOI:
关键词: Transistor 、 Electrical engineering 、 MOSFET 、 Silicide 、 Silicon on insulator 、 Materials science
摘要: The present invention relates to a method of forming transistor and structure. comprises the using double silicide process which reduces resistance floating-body-effect when employed in conjunction with SOI type device architecture.
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