Source drain and extension dopant concentration
作者： Stephanie Watts Butler , Wayne A. Bather , Amitabh Jain , Haowen Bu
DOI:
关键词: Gate stack 、 Electronic engineering 、 Doping 、 Heating cycle 、 Wafer 、 Layer (electronics) 、 Semiconductor device 、 Optoelectronics 、 Dopant 、 Materials science
摘要: A method of forming a semiconductor device includes one or more sidewall spacer layers on the outer surface gate stack. At least region an at partially formed is doped. First and second bodies are opposing sides The formation first sidewall-forming layer outward stack layers, exposing to heating cycle in single wafer reactor, layer. occurs environment that substantially minimizes dopant loss deactivation device.
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