Material for contact etch layer to enhance device performance

摘要: Stress level of a nitride film is adjusted as function two or more the following: identity starting material precursor used to make film; nitrogen-containing with which treated precursor; ratio set CVD conditions under grown; and/or thickness grown. A rapid thermal chemical vapor deposition (RTCVD) produced by reacting compound containing silicon, nitrogen and carbon (such bis-tertiary butyl amino silane (BTBAS)) NH 3 can provide advantageous properties, such high stress excellent performance in an etch-stop application. An ammonia-treated BTBAS particularly providing high-stress property, further having maintainability that property over repeated annealing.