Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
作者： Thomas H. Baum , Bryan C. Hendrix , Tianniu Chen , Jeffery F. Roeder , Chongying Xu
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摘要: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as including silicon carbonitride, oxycarbonitride, and nitride (Si3N4), a method depositing on substrates using low temperature (e.g., < 550 °C) chemical vapor deposition processes, fabrication ULSI devices device structures.
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