Precursors for silicon dioxide gap fill

摘要: A full fill trench structure comprising a microelectronic device substrate having high aspect ratio therein and filled mass of silicon dioxide in the trench, wherein is substantially void-free character has uniform density throughout its bulk mass. corresponding method manufacturing semiconductor product described, involving use specific precursor compositions for filling substrate, which composition processed to conduct hydrolysis condensation reactions forming material trench. The process may be carried out with including germanium, produce GeO2/SiO2 material. suppressor component, e.g., methanol, employed composition, eliminate or minimize seam formation cured