Method of Forming Via Recess in Underlying Conductive Line
作者： Chung-Shi Liu , Chen-Hua Yu , Horng-Huei Tseng , None
DOI:
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摘要: A method of fabricating a semiconductor device includes forming via in dielectric layer that opens to conductive line underlying the layer, and recess at via. The has depth ranging from about 100 angstroms 600 angstroms. Via-fill material fills least partially via, such via-fill is electrically connected line. may have same size or smaller cross-section area than for example. Such structure be part dual damascene an intermetal structure,
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