Silicon carbide deposition for use as a barrier layer and an etch stop

摘要: The present invention generally provides an improved process for depositing silicon carbide, using a silane-based material with certain parameters, onto electronic device, such as semiconductor, that is useful forming suitable barrier layer, etch stop, and passivation layer IC applications. As in the preferred embodiment, particular carbide used to reduce diffusion of copper may also minimize contribution capacitive coupling between interconnect lines. It be instance, below intermetal dielectric (IMD) especially if IMD low k, IMD. In another it provide resistant moisture other adverse ambient conditions. Each these aspects dual damascene structure.