Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

摘要: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, temperature silicon epitaxial and containing nitride (Si 3 N 4 ), siliconoxynitride (SiO x y ) and/or dioxide 2 ). The invention are amenable to use (e.g., <500° C.) chemical vapor deposition processes, fabrication ULSI devices device structures.