Microstructure and chemical bonding in silicon carbonitride films synthesized by plasma enhanced chemical vapor deposition

摘要: Silicon carbonitride films were synthesized by plasma enhanced chemical vapor deposition using silyl derivatives of asymmetric dimethylhydrazine, (CH3)2HSiNHN(CH3)2 and (CH3)2Si[NHN(CH3)2]2, as molecular precursors. The film material consists an amorphous matrix with nanocrystalline inclusions. Indexing synchrotron radiation X‐ray diffraction patterns suggests that the structure nanocrystals is tetragonal lattice parameters a = 9.6A c 6.4A. photoelectron spectra indicate Si—N C—N sp3 hybrid bonds are predominant. absence G‐ or D‐modes in Raman spectra, which otherwise typical structures possessing sp2 bonding, provides further support for nanocrystals.