Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films
作者： A. M. Wrobel , I. Blaszczyk-Lezak
关键词: Materials science 、 Adsorption 、 Surface roughness 、 Arrhenius equation 、 Analytical chemistry 、 Auger electron spectroscopy 、 Silicon 、 Substrate (electronics) 、 Hydrogen 、 Fourier transform infrared spectroscopy
摘要: Silicon carbonitride (Si:C:N) films are produced by hydrogen remote microwave plasma (RP)CVD using a 1,1,3,3-tetramethyldisilazane precursor. The effect of the substrate temperature on rate and yield RPCVD process, chemical composition, structure, surface morphology resulting film investigated. Arrhenius plots dependencies mass- thickness-based growth Si:C:N imply that is controlled adsorption film-forming precursors onto surface. results Auger electron spectroscopy (AES) Fourier transform infrared (FTIR) examinations reveal increase in from 35 °C to 400 °C involves elimination organic groups formation silicon network structure with predominant content Si-C carbidic bonds. atomic force microscopy (AFM) show morphologically homogeneous materials roughness varying narrow range small values (0.9 – 2.0 nm).
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