A study of the chemical bond types in films deposited from bis (trimethylsilyl)-ethylamine by PECVD
作者： E. N. Ermakova , V. G. Kesler , Yu. M. Rumyantsev , M. L. Kosinova
DOI: 10.1134/S0022476614030093
关键词: Ethylamine 、 Materials science 、 X-ray photoelectron spectroscopy 、 Inorganic chemistry 、 Silicon 、 Plasma-enhanced chemical vapor deposition 、 Carbon film 、 Trimethylsilyl 、 Chemical bond 、 Thin film
摘要: Silicon carbonitride films are synthesized by plasma enhanced chemical vapor deposition from bis(trimethylsilyl)ethylamine and helium or ammonium mixtures. The structure of bonds in the is studied X-ray photoelectron IR spectroscopy. data on main types present silicon deposited under different synthesis conditions obtained. It shown that use ammonia at a low temperature provides with simultaneous formation Si-C, Si-N, C-N bonds. obtained mixture Si-C Si-N. high temperatures close to SiCx regardless type additional gas used.
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