Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications
作者： Srinivasan Sundararajan , Mayur Trivedi
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摘要: A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and effective in preventing the migration or diffusion of metal copper atoms through SiCN layer. The can be used as barrier between portion (such line via) an insulating dielectric to prevent atom into dielectric. also etchstop passivation applied variety ways, including PECVD (e.g., using SiH 4 , CH NH 3 ) HDP CVD C 2 H N
lens.org 参考文章(14)
Loren Andrew Haluska, Coatings for microelectronic devices and substrates ,(1991)
Mark Jon Loboda, Keith Winton Michael, Robert Charles Camilletti, Semiconductor chips suitable for known good die testing ,(1996)
Scott Meikle, Yoshiko Suzuki, Yoshinori Hatanaka, The role of hydrogen dilution in deposition of a‐SiC:H from silane/ethylene mixtures Journal of Applied Physics. ,vol. 67, pp. 1048- 1050 ,(1990) , 10.1063/1.345789
D. Girginoudi, A. Thanailakis, The effect of hydrogen content on the optoelectronic properties of amorphous silicon-carbide films Journal of Applied Physics. ,vol. 69, pp. 1490- 1493 ,(1991) , 10.1063/1.347237
S. W. Rynders, A. Scheeline, P. W. Bohn, Structure evolution in a‐SiC:H films prepared from tetramethylsilane Journal of Applied Physics. ,vol. 69, pp. 2951- 2960 ,(1991) , 10.1063/1.348606
C. C. Tsai, Characterization of amorphous semiconducting silicon-boron alloys prepared by plasma decomposition Physical Review B. ,vol. 19, pp. 2041- 2055 ,(1979) , 10.1103/PHYSREVB.19.2041
B. Goldstein, C. R. Dickson, I. H. Campbell, P. M. Fauchet, Properties of p+ microcrystalline films of SiC:H deposited by conventional rf glow discharge Applied Physics Letters. ,vol. 53, pp. 2672- 2674 ,(1988) , 10.1063/1.100193
Motoharu Yamazaki, Jun-ichi Nakata, Shozo Imao, Junji Shirafuji, Yoshio Inuishi, AC Conductivity of Undoped a-Si:H and µc-Si:H in Connection with Morphology and Optical Degradation Japanese Journal of Applied Physics. ,vol. 28, pp. 577- 585 ,(1989) , 10.1143/JJAP.28.577
Mark Jon Midland Loboda, Keith Winton Midland Michael, Silicon carbide metal diffusion barrier layer ,(1996)
Claes H. Bjorkman, Kuowei Liu, Wai-Fan Yau, Dennis Yost, Nasreen Gazala Chapra, Hongquing Shan, Yunsang Kim, Farhad K. Moghadam, Min Melissa Yu, Gerald Yin, David W. Cheung, Judy H. Huang, Betty Tang, Integrated low k dielectrics and etch stops ,(2001)