Semiconductor Devices and Methods of Manufacturing Thereof

作者: Matthias Lipinski , Chandrasekhar Sarma , Alois Gutmann , Jingyu Lian , Haoren Zhuang

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摘要: Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality features is formed on a workpiece, the being located in first region second workpiece. Features have lateral dimension, wherein dimension greater than dimension. The masked, reduced.

参考文章(88)
Srinivasan Chakravarthi, Johan Weijtmans, Periannan Chidambaram, Carbon-Doped Epitaxial SiGe ,(2007)
Hwa-Sung Rhee, Ueno Tetsuji, Ho Lee, Dong-Suk Shin, Seung-Hwan Lee, Method of fabricating CMOS transistor and CMOS transistor fabricated thereby ,(2005)
Chun-Li Liu, Marius K. Orlowski, Dharmesh Jawarani, Diffusion barrier for nickel silicides in a semiconductor fabrication process ,(2005)