SRAM device structure including same band gap transistors having gate stacks with high-K dielectrics and same work function
作者： Robert C. Wong , Haining S. Yang
DOI:
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摘要: An SRAM semiconductor device includes: at least a first and second field effect transistor formed on same substrate, each of the transistors including gate stack, stack layer disposed metal layer, being high-k dielectric located over chemical region, wherein have approximately work function, channel region has band gap.
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