Diffusion barrier for nickel silicides in a semiconductor fabrication process
作者： Chun-Li Liu , Marius K. Orlowski , Dharmesh Jawarani
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摘要: A semiconductor fabrication method includes forming a gate module overlying substrate. Recesses are etched in the substrate using as mask. barrier layer is deposited over wafer and anisotropically to form “curtains” on sidewalls of source/drain recesses. metal wherein contacts within recess. The annealed silicide selectively. diffusivity with respect structure material an order magnitude less than material. recesses may include re-entrant sidewalls. be nickel titanium nitride layer. Silicon or silicon germanium epitaxial structures formed
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