Influence of polarity of set voltage on the properties of conductive filaments in NiO based nonvolatile memory device
作者： Hui-Yu Yan , Zhi-Qing Li
DOI: 10.1016/J.SSE.2016.11.017
关键词:
摘要: In this paper, we realize the coexistence of bipolar and unipolar resistive switching (RS) in one Pt-Ir/NiO/TiB1+δ cell. The types RS are controlled by polarity set voltage free from current compliance. Based on coexistence, characters filaments formed studied. results show that also dependence voltage. positive can induce metallic while negative result semiconductor filaments. It reveals distribution magnitude shows abnormal our devices. combination theory interaction between oxygen vacancy defects one-carrier impact ionization breakdown account for these results. influence filament properties is discussed.
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