ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels
作者： Katsumasa Kamiya , Moon Young Yang , Seong-Geon Park , Blanka Magyari-Köpe , Yoshio Nishi
DOI: 10.1063/1.3685222
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摘要: We study the ON-OFF switching mechanism of oxide-based resistive–random–access–memories using theoretical calculations. Electron deficient vacancies (VO) up to 1+ charge states would stabilize a cohesive filament, while further electron removal will disrupted VO configurations with 2+ charges. The cohesion-isolation transition upon carrier injection and is shown be strong driving force in process. also propose that bipolar or unipolar behavior determined by how carriers are injected into VO. control electrode material selection essential for desired switching.
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