Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors.
作者： Jong Yeog Son , Cheol Hwan Kim , Jin Hyoung Cho , Young-Han Shin , Hyun M. Jang
DOI: 10.1021/NN100323X
关键词: Optoelectronics 、 Resistive random-access memory 、 Ferromagnetism 、 Exchange bias 、 Thin film 、 Materials science 、 Non-blocking I/O 、 Antiferromagnetism 、 Bistability 、 Capacitor
摘要: We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an …
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postech.ac.kr参考文章(30)
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