Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3
作者： X. G. Chen , X. B. Ma , Y. B. Yang , L. P. Chen , G. C. Xiong
DOI: 10.1063/1.3569586
关键词:
摘要: We have demonstrated that the resistance switching (RS) effect can be controlled by modification of electrode configurations and carrier densities in Ag/SrTiO3 Ag/Nb-doped SrTiO3(Nb:STO) structures. The elimination Schottky junction metal/Nb:STO completely destroys RS effect, which suggests originates from Schottky-like barrier formed at interface metal/Nb:STO. rectifying I-V curves revealed change was attributed to trapping or detrapping carriers interface. density plays an important role determination effect. presence SrTiO3 requires appropriate doping level provide conditions for
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