Modeling for bipolar resistive memory switching in transition-metal oxides
作者： Ji Hyun Hur , Myoung-Jae Lee , Chang Bum Lee , Young-Bae Kim , Chang-Jung Kim
DOI: 10.1103/PHYSREVB.82.155321
关键词:
摘要: A model which describes the bipolar resistive switching in transition-metal oxides is presented. To simulate effect of switching, we modeled results doping by oxygen vacancies along with variable Schottky barrier and resistor. The simultaneously predicts three key features experimental measurements: rectifying behavior high resistance states, abrupt existence bistable states. Our based on modulation formed oxide layer at metal-oxide interface. Experimental measurements $\text{Pt}/{\text{Ta}}_{2}{\text{O}}_{5}/{\text{TaO}}_{x}/\text{Pt}$ structure matched very well our nonvolatile model.
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sci-hub.se 参考文章(20)
Myoung-Jae Lee, Seungwu Han, Sang Ho Jeon, Bae Ho Park, Bo Soo Kang, Seung-Eon Ahn, Ki Hwan Kim, Chang Bum Lee, Chang Jung Kim, In-Kyeong Yoo, David H Seo, Xiang-Shu Li, Jong-Bong Park, Jung-Hyun Lee, Youngsoo Park, None, Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Letters. ,vol. 9, pp. 1476- 1481 ,(2009) , 10.1021/NL803387Q
Stefan Dietrich, Michael Angerbauer, Milena Ivanov, Dietmar Gogl, Heinz Hoenigschmid, Michael Kund, Corvin Liaw, Michael Markert, Ralf Symanczyk, Laith Altimime, Serge Bournat, Gerhard Mueller, A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control IEEE Journal of Solid-state Circuits. ,vol. 42, pp. 839- 845 ,(2007) , 10.1109/JSSC.2007.892207
A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura, Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface arXiv: Materials Science. ,(2004) , 10.1063/1.1812580
M. J. Rozenberg, I. H. Inoue, M. J. Sánchez, Nonvolatile Memory with Multilevel Switching: A Basic Model Physical Review Letters. ,vol. 92, pp. 178302- ,(2004) , 10.1103/PHYSREVLETT.92.178302
M. J. Rozenberg, I. H. Inoue, M. J. Sánchez, Strong electron correlation effects in nonvolatile electronic memory devices Applied Physics Letters. ,vol. 88, pp. 033510- ,(2006) , 10.1063/1.2164917
Myoung‐Jae Lee, Sun I Kim, Chang B Lee, Huaxiang Yin, Seung‐Eon Ahn, Bo S Kang, Ki H Kim, Jae C Park, Chang J Kim, Ihun Song, Sang W Kim, Genrikh Stefanovich, Jung H Lee, Seok J Chung, Yeon H Kim, Youngsoo Park, None, Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory Advanced Functional Materials. ,vol. 19, pp. 1587- 1593 ,(2009) , 10.1002/ADFM.200801032
Hisashi Shima, Fumiyoshi Takano, Hiro Akinaga, Yukio Tamai, Isao H. Inoue, Hide Takagi, Resistance switching in the metal deficient-type oxides: NiO and CoO Applied Physics Letters. ,vol. 91, pp. 012901- ,(2007) , 10.1063/1.2753101
S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, A. J. Jacobson, Field-induced resistive switching in metal-oxide interfaces Applied Physics Letters. ,vol. 85, pp. 317- 319 ,(2004) , 10.1063/1.1768305
A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, D. Widmer, Reproducible switching effect in thin oxide films for memory applications Applied Physics Letters. ,vol. 77, pp. 139- 141 ,(2000) , 10.1063/1.126902
S. Q. Liu, N. J. Wu, A. Ignatiev, Electric-pulse-induced reversible resistance change effect in magnetoresistive films Applied Physics Letters. ,vol. 76, pp. 2749- 2751 ,(2000) , 10.1063/1.126464