Strong electron correlation effects in nonvolatile electronic memory devices
作者： M. J. Rozenberg , I. H. Inoue , M. J. Sánchez
DOI: 10.1063/1.2164917
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摘要: We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce qualitatively similar those often experimentally observed heterostructures of transition metal oxides. One them is switching effect based on metal-insulator due strong electron correlations at the dielectric/metal interface. The resistance phenomenon could be experimental realization strongly correlated device.
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