Conduction Response in Highly Flexible Nonvolatile Memory Devices

作者: Shuxia Ren , Zhenhua Li , Lingzhi Tang , Xiao Su , He Zhang

DOI: 10.1002/AELM.202000151

关键词:

摘要: Resistive random access memories (RRAMs) are promising candidates for future nonvolatile memories. Here, a flexible nonvolatile resistive switching (RS) device is …

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