Low voltage resistive memory devices based on graphene oxide–iron oxide hybrid
作者： Janardhanan R. Rani , Se-I. Oh , Jeong Min Woo , Jae-Hyung Jang
DOI: 10.1016/J.CARBON.2015.07.011
关键词:
摘要: Abstract Low cost resistive switching memory devices using graphene oxide–iron oxide (GF) hybrid thin films, sandwiched between platinum (Pt) and indium-tin-oxide (ITO) electrodes, were demonstrated. The fabricated with Pt/GF/ITO structure exhibited reliable reproducible bipolar performance, an ON/OFF current ratio of 5 × 103, excellent retention time longer than 105 s, SET voltage 0.9 V, good endurance properties. In all aspects the device characteristics, GF based outperformed (GO) devices. Ohmic conduction was found to be dominant mechanism in regions except for high regime where space charge limited trap main mechanism. X-ray photoelectron spectroscopy transmission electron microscopy/selected area diffraction analysis revealed γ-Fe2O3 Fe3O4 iron phases coexist films. While desorption/adsorption oxygen-related functional groups on GO sheets is Pt/GO/ITO devices, formation/rupture multiple highly conducting filaments at oxide/GO interface additionally facilitate present Thereby, electrical performance achieved.
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