作者: Won Gyu Lim , Dea Uk Lee , Han Gil Na , Hyoun Woo Kim , Tae Whan Kim
DOI: 10.1016/J.APSUSC.2017.03.231
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摘要: Abstract Organic bistable devices (OBDs) with exfoliated mica nanoparticles (NPs) embedded into an insulating poly(methylmethacrylate) (PMMA) layer were fabricated by using a spin-coating method. Current–voltage (I–V) curves for the Al/PMMA/exfoliated NP/PMMA/indium-tin-oxide/glass at 300 K showed clockwise current hysteresis behavior due to existence of muscovite-type NPs, which is essential feature devices. Write-read-erase-read data that OBDs had rewritable nonvolatile memories and endurance number ON/OFF switching 102 cycles. An ratio 1 × 103 was maintained retention times larger than 1 × 104 s. The memory mechanisms described trapping tunneling processes within PMMA active containing NPs on basis energy band diagram I–V curves.