Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.

摘要: A resistive random access memory (RRAM) device with self-rectifying I-V characteristics was fabricated by inserting a silicon nitride (Si3N4) layer between the bottom electrode and solution-processed active material of an iron oxide-graphene oxide (FeOx-GO) hybrid. The Au/Ni/FeOx-GO/Si3N4/n+-Si exhibited excellent switching ratio rectification higher than 104. In device, occurs in both FeOx-GO Si3N4 layers separately, resulting highly uniform stable performance. from high resistance state to low through trap-assisted tunneling process layer, enabled which prevents diffusion migrating Ni metal into layer. intrinsic our devices arise asymmetric barriers for electrons traps is sandwiched top electrodes having dissimilar work functions. Our study confirmed that integrating suitable dielectric conventional RRAM cell innovative strategy simplify architecture fabrication realize crossbar arrays.