Electric field induced manipulation of resistive and magnetization switching in Pt/NiFe1.95Cr0.05O4/Pt memory devices
作者： Aize Hao , Dianzeng Jia , Muhammad Ismail , Wenhua Huang , Ruqi Chen
DOI: 10.1063/1.5091841
关键词:
摘要: In this letter, both resistive and magnetization switching were realized in Pt/NiFe1.95Cr0.05O4 (Cr-NFO)/Pt devices by the manipulation applied electric field process, where a Cr-NFO layer was prepared facile chemical solution process method. The based exhibited stable unipolar behavior, uniform operating voltages, good endurance (>103 cycles), large ON/OFF memory window (>102), excellent retention characteristic time (>105 s at 25 °C). Meanwhile, saturation of showed reversible different resistance states. significant change between high state low could reach as ∼50% during operation. ON-OFF can be achieved room temperature switching. proposed physical mechanism magnetized related to formation rupture conduction filaments consisting oxygen vacancies cations, which on conversion Fe (Fe3+ → Fe2+) Cr (Cr3+ Cr4+) valence change, redox reaction, Joule heating effects. coexistence ferrite thin film has potential application nonvolatile magneto-electric coupling devices.
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