Submicron semiconductor devices
作者： Addison B. Jones , Michael T. Elliott , John P. Reekstin , Michael R. Splinter
DOI:
关键词: Hybrid silicon laser 、 Transistor 、 Optoelectronics 、 Silicon based 、 Gate oxide 、 NMOS logic 、 Electron-beam lithography 、 Silicon 、 Materials science 、 Semiconductor device
摘要: Semiconductor devices with gate dimensions as small 0.25 microns square have been fabricated using electron beam lithography and dry processing techniques. In particular, silicon gate, N-channel, metal-oxide-semiconductor (NMOS) field-effect-transistors (FET) produced. The the process are especially adapted to bulk based transistors.
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