Effect of Partial Screening upon the Conductance Through Nanostructured Devices

摘要: Low-temperature transport properties of nanostructured semiconductor devices have been monitored in the laboratory for well over a decade now. Two basic arrangements most often studied: single-electron transistor, which quantum dot bridges two independent electron gases, and T-shaped device, is side-coupled to wire. In both cases, thermal dependence measured zero-bias conductances has phenomenologically fitted by scaling shifting universal curve gu(T/TK) particle–hole symmetric Anderson Hamiltonian, where TK Kondo temperature. Here, an exact linear mapping between conductance derived. Under assumption that magnetic moment partially screened at high temperatures, it fits experimental data very well.