Universal zero-bias conductance for the single-electron transistor

摘要: The thermal dependence of the zero-bias conductance for single electron transistor is target two independent renormalization-group approaches, both based on spin-degenerate Anderson impurity model. first approach, an analytical derivation, maps Kondo-regime onto universal function particle-hole symmetric Linear, mapping parametrized by Kondo temperature and charge in cloud. second a numerical computation as applied gate voltages offers comprehensive view transport through device. approach exact regime; second, essentially throughout parametric space For illustrative purposes, curves resulting from approaches are compared.