Insulating film material, method for forming film by using the insulating film material, and insulating film
作者： Yoshiaki Inaishi , Nonuo Tajima , Manabu Shinriki , Kazuhiro Miyazawa , Takahisa Ohno
DOI:
关键词: Plasma 、 Film material 、 Molecule 、 Composite material 、 Chemical formula 、 Electronic engineering 、 Materials science
摘要: An insulating film material for plasma CVD, wherein the is represented by chemical formula (1); a forming method using material; and an film; (in formula, m n represent integer of 3 to 6, may be same or different from each other in molecule.)
lens.org 参考文章(7)
Takahiko Kurosawa, Kaori Shirato, Method of forming cavity between multilayered wirings ,(2003)
Brian Keith Peterson, Raymond Nicholas Vrtis, Jean Louise Vincent, Mark Leonard O'neill, Low dielectric constant material and method of processing by CVD ,(2002)
Christian Dussarrat, Nicolas Merle, Stéphane Daniele, Nicolas Blasco, New group v metal containing precursors and their use for metal containing film deposition ,(2007)
Mark Jon Loboda, Byung Keun Hwang, Method for producing hydrogenated silicon oxycarbide films ,(2004)
Robert J. Corriu, Claude G. Chuit, Genevieve E. Cerveau, Catherine Reye, New hexacoordinate silicon complexes, the process for their preparation and their application ,(1985)
Tatsuhiro Kurasawa, 辰博 倉沢, Copper diffused barrier insulating film and method for forming the same ,(2003)