Low dielectric constant material and method of processing by CVD

摘要: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts fluorocarbon species. Preferred are represented by the formula Si v O w C x H y F z , where v+w+x+y+z=100%, is from 10 to 35 atomic %, 65 % 50 1 30 0.1 15 x/z optionally greater than 0.25, wherein substantially none fluorine bonded carbon. A CVD method includes: (a) providing a substrate within vacuum chamber; (b) introducing into chamber gaseous reagents including fluorine-providing gas, an oxygen-providing gas at least one precursor selected organosilane organosiloxane; (c) applying energy in induce reaction form film on substrate.