Plasma Etching of Si, SiO2, Si3 N 4, and Resist with Fluorine, Chlorine, and Bromine Compounds
作者： Douglas R. Sparks
DOI: 10.1149/1.2069485
关键词: Reactive-ion etching 、 Silicon nitride 、 Plasma processing 、 Etching (microfabrication) 、 Plasma etching 、 Dry etching 、 Nitride 、 Inorganic chemistry 、 Plasma-enhanced chemical vapor deposition 、 Chemistry
摘要: The plasma etching of silicon, silicon dioxide, nitride, and positive photoresist are examined using NF 3 , CF 4 SiF Cl 2 HBr, He/O . Pressure magnetic field varied in a factorial manner all gases materials single-wafer etch system. Low pressure chemical vapor deposition plasma-enhanced nitride compared. Optical emission data were also gathered from this study. Selectivities applications discussed
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