On the interplay between plasma ions, radicals and surfaces: who dominates the interaction?
作者： Ellen R Fisher
DOI: 10.1088/0963-0252/11/3A/316
关键词:
摘要: Ions and radicals are known to be key players in many plasma processes, including anisotropic etching, film deposition surface modification. How different species influence the reactions reactivity of each other is not, however, fully understood, especially with respect interactions. Using our imaging interacting surfaces (IRIS) technique, we have measured effects ion bombardment on a number species. Results from IRIS experiments for SiF SiF2 SiF4 plasmas, CF2 hexafluoropropylene oxide NH NH2 NH3 plasmas presented variety substrates. Depending molecule, applied rf power, substrate material, these display wide Moreover, increases scattering primarily etching regimes (SiF2, CF2, NH2), decreases one system (NH polymer substrates), has no effect plasmas. Correlating radical relationships leads possible processing mechanisms, which also discussed.
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sci-hub.se 参考文章(26)
Carmen I. Butoi, Neil M. Mackie, Patrick R. McCurdy, James R. D. Peers, Ellen R. Fisher, Surface Interactions of Radicals During Plasma Processing of Polymers Plasmas and Polymers. ,vol. 4, pp. 77- 91 ,(1999) , 10.1023/A:1021855632553
K. Miyata, M. Hori, T. Goto, CFX(X=1–3) radical densities during Si, SiO2, and Si3N4 etching employing electron cyclotron resonance CHF3 plasma Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 15, pp. 568- 572 ,(1997) , 10.1116/1.580685
Carmen I. Butoi, Neil M. Mackie, Keri L. Williams, Nathan E. Capps, Ellen R. Fisher, Ion and substrate effects on surface reactions of CF2 using C2F6,C2F6/H2, and hexafluoropropylene oxide plasmas Journal of Vacuum Science and Technology. ,vol. 18, pp. 2685- 2698 ,(2000) , 10.1116/1.1312371
Cameron F. Abrams, David B. Graves, Molecular dynamics simulations of Si etching by energetic CF3 Journal of Applied Physics. ,vol. 86, pp. 5938- 5948 ,(1999) , 10.1063/1.371637
Douglas R. Sparks, Plasma Etching of Si, SiO2, Si3 N 4, and Resist with Fluorine, Chlorine, and Bromine Compounds Journal of The Electrochemical Society. ,vol. 139, pp. 1736- 1741 ,(1992) , 10.1149/1.2069485
C. T. Rettner, D. J. Auerbach, J. C. Tully, A. W. Kleyn, Chemical Dynamics at the Gas−Surface Interface The Journal of Physical Chemistry. ,vol. 100, pp. 13021- 13033 ,(1996) , 10.1021/JP9536007
K. H. A. Bogart, J. P. Cushing, Ellen R. Fisher, Effects of Plasma Processing Parameters on the Surface Reactivity of OH(X2Π) in Tetraethoxysilane/O2 Plasmas during Deposition of SiO2 Journal of Physical Chemistry B. ,vol. 101, pp. 10016- 10023 ,(1997) , 10.1021/JP971596O
Patrick R. McCurdy, Vincent A. Venturo, Ellen R. Fisher, Velocity distributions of NH2 radicals in an NH3 plasma molecular beam Chemical Physics Letters. ,vol. 274, pp. 120- 126 ,(1997) , 10.1016/S0009-2614(97)00625-8
Cameron F Abrams, David B Graves, Atomistic simulation of silicon bombardment by energetic CF3+: product distributions and energies Thin Solid Films. ,vol. 374, pp. 150- 156 ,(2000) , 10.1016/S0040-6090(00)01145-7
Roberto Murri, Luigi Schiavulli, Giovanni Bruno, Pio Capezzuto, Gianni Grillo, Deposition rate, ion bombardment and gap states density in glow discharge a-Si:H,F films Thin Solid Films. ,vol. 182, pp. 105- 114 ,(1989) , 10.1016/0040-6090(89)90248-4