Effects of Plasma Processing Parameters on the Surface Reactivity of OH(X2Π) in Tetraethoxysilane/O2 Plasmas during Deposition of SiO2
作者： K. H. A. Bogart , J. P. Cushing , Ellen R. Fisher
DOI: 10.1021/JP971596O
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摘要: … in TEOS-based plasmas to include reactivity measurements as a function of P and T S . We also determine ϑ T and ϑ R for OH and the effect … involved in TEOS-based PECVD systems. …
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