Ion effects on CF2 surface interactions during C3F8 and C4F8 plasma processing of Sia)
作者： Ina T. Martin , Ellen R. Fisher
DOI: 10.1116/1.1781180
关键词:
摘要: Surface interactions of difluorocarbene (CF2) molecules were investigated using our LIF based imaging radicals interacting with surfaces (IRIS) apparatus. data CF2 in C3F8 and C4F8 plasma molecular beams reveal that the relative densities increase increasing rf power source pressure both systems. The surface reactivity during processing room temperature Si substrates was also measured over a broad range at different pressures. A scatter coefficient (S) greater than one for all unperturbed systems, indicating are produced substrate film deposition. same systems studied under ion-limited conditions, yielding S∼1, clear indication ions partially responsible production. Plasma identified plasma-ion mass spectrometry. These indicate higher levels CxFy+(x>1) plasmas. X-ray photo...
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(31)
Carmen I. Butoi, Neil M. Mackie, Patrick R. McCurdy, James R. D. Peers, Ellen R. Fisher, Surface Interactions of Radicals During Plasma Processing of Polymers Plasmas and Polymers. ,vol. 4, pp. 77- 91 ,(1999) , 10.1023/A:1021855632553
Ina T. Martin, Galiya Sh. Malkov, Carmen I. Butoi, Ellen R. Fisher, Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas Journal of Vacuum Science and Technology. ,vol. 22, pp. 227- 235 ,(2004) , 10.1116/1.1638779
A. N. Goyette, Yicheng Wang, M. Misakian, J. K. Olthoff, Ion fluxes and energies in inductively coupled radio-frequency discharges containing C2F6 and c-C4F8 Journal of Vacuum Science and Technology. ,vol. 18, pp. 2785- 2790 ,(2000) , 10.1116/1.1308590
Carmen I. Butoi, Neil M. Mackie, Keri L. Williams, Nathan E. Capps, Ellen R. Fisher, Ion and substrate effects on surface reactions of CF2 using C2F6,C2F6/H2, and hexafluoropropylene oxide plasmas Journal of Vacuum Science and Technology. ,vol. 18, pp. 2685- 2698 ,(2000) , 10.1116/1.1312371
Masayuki Nakamura, Masaru Hori, Toshio Goto, Masafumi Ito, Nobuo Ishii, Spatial distribution of the absolute densities of CFx radicals in fluorocarbon plasmas determined from single-path infrared laser absorption and laser-induced fluorescence Journal of Applied Physics. ,vol. 90, pp. 580- 586 ,(2001) , 10.1063/1.1337090
T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein, J. M. Cook, High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 16, pp. 239- 249 ,(1998) , 10.1116/1.580978
K. H. A. Bogart, J. P. Cushing, Ellen R. Fisher, Effects of Plasma Processing Parameters on the Surface Reactivity of OH(X2Π) in Tetraethoxysilane/O2 Plasmas during Deposition of SiO2 Journal of Physical Chemistry B. ,vol. 101, pp. 10016- 10023 ,(1997) , 10.1021/JP971596O
Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara, Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics Applied Physics Letters. ,vol. 70, pp. 1078- 1079 ,(1997) , 10.1063/1.118490
Cameron F Abrams, David B Graves, Atomistic simulation of silicon bombardment by energetic CF3+: product distributions and energies Thin Solid Films. ,vol. 374, pp. 150- 156 ,(2000) , 10.1016/S0040-6090(00)01145-7
Jean-Paul Booth, Optical and electrical diagnostics of fluorocarbon plasma etching processes Plasma Sources Science and Technology. ,vol. 8, pp. 249- 257 ,(1999) , 10.1088/0963-0252/8/2/005