Plasma-Enhanced Atomic Layer Deposition of Ni
作者： Han-Bo-Ram Lee , Sung-Hwan Bang , Woo-Hee Kim , Gil Ho Gu , Young Kuk Lee
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摘要: Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 reactant was comparatively investigated. PE-ALD showed higher growth rate, lower resistivity, C content than that plasma. films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), energy loss (EELS). The results the reaction chemistry of ALD clearly different with H2, probably due to effects NHx radicals.
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J. D. Ferguson, E. R. Smith, A. W. Weimer, S. M. George, ALD of SiO2 at Room Temperature Using TEOS and H 2 O with NH 3 as the Catalyst Journal of The Electrochemical Society. ,vol. 151, ,(2004) , 10.1149/1.1768548
Han-Bo-Ram Lee, J. Y. Son, H. Kim, Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co Applied Physics Letters. ,vol. 90, pp. 213509- ,(2007) , 10.1063/1.2742791
Michelle L. Steen, Kristen R. Kull, Ellen R. Fisher, Comparison of surface interactions for NH and NH2 on polymer and metal substrates during NH3 plasma processing Journal of Applied Physics. ,vol. 92, pp. 55- 63 ,(2002) , 10.1063/1.1486038
H. Kim, C. Cabral, C. Lavoie, S. M. Rossnagel, Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition Journal of Vacuum Science & Technology B. ,vol. 20, pp. 1321- 1326 ,(2002) , 10.1116/1.1486233
J.A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, M. De Potter, R. Lindsay, K. Maex, Ni- and Co-based silicides for advanced CMOS applications Microelectronic Engineering. ,vol. 70, pp. 158- 165 ,(2003) , 10.1016/S0167-9317(03)00370-8
Yuji Goto, Kota Taniguchi, Takahisa Omata, Shinya Otsuka-Yao-Matsuo, Naoki Ohashi, Shigenori Ueda, Hideki Yoshikawa, Yoshiyuki Yamashita, Hirofumi Oohashi, Keisuke Kobayashi, Formation of Ni3C Nanocrystals by Thermolysis of Nickel Acetylacetonate in Oleylamine: Characterization Using Hard X-ray Photoelectron Spectroscopy Chemistry of Materials. ,vol. 20, pp. 4156- 4160 ,(2008) , 10.1021/CM703644X
Ellen R Fisher, On the interplay between plasma ions, radicals and surfaces: who dominates the interaction? Plasma Sources Science and Technology. ,vol. 11, pp. 175- 182 ,(2002) , 10.1088/0963-0252/11/3A/316
J.W. Klaus, S.M. George, Atomic layer deposition of SiO2 at room temperature using NH3-catalyzed sequential surface reactions Surface Science. ,vol. 447, pp. 81- 90 ,(2000) , 10.1016/S0039-6028(99)01119-X
C. Fitz, M. Goldbach, A. Dupont, S. Schmidbauer, Silicides as contact material for DRAM applications Microelectronic Engineering. ,vol. 82, pp. 460- 466 ,(2005) , 10.1016/J.MEE.2005.07.043
K.-C. Min, M. Kim, Y.-H. You, S.S. Lee, Y.K. Lee, T.-M. Chung, C.G. Kim, J.-H. Hwang, K.-S. An, N.-S. Lee, Y. Kim, NiO thin films by MOCVD of Ni(dmamb)2 and their resistance switching phenomena Surface & Coatings Technology. ,vol. 201, pp. 9252- 9255 ,(2007) , 10.1016/J.SURFCOAT.2007.04.120