Mechanisms for deposition and etching in fluorosilane plasma processing of silicon
作者： Keri L. Williams , Carmen I. Butoi , Ellen R. Fisher
DOI: 10.1116/1.1595109
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摘要: A variety of analytical tools have been used to examine the gas-phase and surface chemistry SiF4 SiF4/H2 plasmas interacting with Si substrates. The effect rf power (P) source gas ratios on film composition, species densities, plasma–surface interactions SiF SiF2 studied. Film characterization was performed using Fourier transfer infrared, x-ray photoelectron spectroscopy, spectroscopic ellipsometry. Using imaging radicals surfaces technique, spatially resolved laser-induced fluorescence images SiFx were collected characterize both plasma-surface interface phase. Additional achieved optical emission spectroscopy mass spectrometry. From all these data, three plasma types defined. In etching systems (type 1) (e.g., 100% SiF4 at P>20 W), no net deposition occurs, are produced surface. When only F atom incorporat...
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