Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using SiF4∕N2∕H2 mixtures

摘要: Fluorinated silicon-nitride films have been prepared at low temperature (250°C) by remote plasma enhanced chemical vapor deposition using mixtures of SiF4, N2, Ar, and various H2 flow rates. The deposited were characterized means single wavelength ellipsometry, infrared transmission, resonant nuclear reactions, Rutherford backscattering analysis, current-voltage measurements. It was found that without hydrogen grow with the highest rate, however, they result fluorine content (∼27at.%) excess silicon (Si∕Nratio≈1.75). These also lowest refractive index etch exhibit very poor dielectric properties. As a consequence high content, these hydrolize rapidly upon exposure to ambient moisture, forming Si–H N–H bonds, do not oxidize completely. addition process reduces rate but improves systematically stability an...