Plasma-enhanced chemical vapor deposition of silicon nitride below 250°C
作者： Yue Kuo , Hyun Ho Lee
DOI: 10.1016/S0042-207X(02)00134-3
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摘要: Abstract The low-temperature plasma-enhanced chemical vapor deposition of SiN x has been studied. main process parameters are: temperature, i.e., between 100°C and 250°C, power, 300 700 W. Variation the film's rate bond structure with respect to these were investigated. influence plasma power characteristics at low substrate temperature is more pronounced than that high temperature. condition reaction mechanism discussed.
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