Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition
作者： Young-Bae Park , Shi-Woo Rhee
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摘要: Hydrogenated silicon nitride (a-SiNx:H) films were deposited at temperatures ranging from 50 to 300 °C with remote plasma enhanced chemical vapor deposition (RPECVD) NH3 and SiH4. The effect of the operating variables, such as temperature especially partial pressure ratio reactant (R=NH3/SiH4) on properties Sa-SiNx:H interface was investigated. H* radical dominantly observed rate proportional NH* concentration. density highly energetic N 2 * radicals increased in high power regime which film surface roughened, but they promote reactions even low temperature. refractive index more closely related stoichiometry than density. trap is amount intermediate species Si–NH bonds Si/SiNx:H it can be minimized by reducing Si bonding state. showed a midgap 2 × 1011 - 1012cm-2. © 2001 Kluwer Academic Publishers
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