Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride
作者： Ikunori Kobayashi , Tetsu Ogawa , Sadayoshi Hotta
DOI: 10.1143/JJAP.31.336
关键词: Silicon nitride 、 Chemical vapor deposition 、 Analytical chemistry 、 Optoelectronics 、 Thin film 、 Chemical substance 、 Thin-film transistor 、 Transistor 、 Chemistry 、 Plasma-enhanced chemical vapor deposition 、 Band gap 、 General Engineering 、 General Physics and Astronomy
摘要: The optimum condition of plasma-enhanced chemical vapor deposition to deposite silicon nitride (SiNx) film and its application as a gate insulator a-Si thin-film transistor (TFT) have been investigated. internal stress SiNx in the range 4.3×109 dyn/cm2 tensile 8.0×109 compressive is found be controllable by changing ratio H2 N2 source gases without affecting optical band gap. Satisfactory TFT characteristics high reliability are realized using having either stoichiometric or N-rich composition which shows large
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