Electron beam induced damage in N-rich SiNx films deposited by plasma enhanced chemical vapour deposition
作者： Ch.B. Lioutas , N. Vouroutzis , E.C. Paloura , Y. Kuo
DOI: 10.1016/S0040-6090(96)09357-1
关键词:
摘要: Abstract The electron-beam induced damage in N-rich SiN x :H films, deposited on Si by plasma enhanced chemical vapour deposition, is studied using cross-section transmission electron microscopy. It demonstrated that these films are unstable under beam irradiation, during conventional microscopy observations (120 keV), which causes strong outdiffusion of from the substrate into layer. This phenomenon leads a number changes include evolution voids at SiN/Si interface and development morphology previously featureless (as-grown) films. Finally, plane-view diffraction patterns identify presence unreacted embedded matrix amorphous .
harvard.edu
auth.gr
elsevier.com
sci-hub.se 参考文章(11)
Yue Kuo, PECVD Silicon Nitride as a Gate Dielectric for Amorphous Silicon Thin Film Transistor Process and Device Performance Journal of The Electrochemical Society. ,vol. 142, pp. 186- 190 ,(1995) , 10.1149/1.2043863
T. Aiyama, T. Fukunaga, K. Niihara, T. Hirai, K. Suzuki, An X-ray diffraction study of the amorphous structure of chemically vapor-deposited silicon nitride Journal of Non-crystalline Solids. ,vol. 33, pp. 131- 139 ,(1979) , 10.1016/0022-3093(79)90043-7
E.C. Paloura, Y. Kuo, W. Braun, On the effect of bonded hydrogen in the local microstructure of PECVD SiNx:H films Physica B-condensed Matter. ,vol. 208, pp. 562- 564 ,(1995) , 10.1016/0921-4526(94)00751-G
J. Petruzzello, T. F. McGee, M. H. Frommer, V. Rumennik, P. A. Walters, C. J. Chou, Transmission electron microscopy and Auger electron spectroscopy of silicon‐on‐insulator structures prepared by high‐dose implantation of nitrogen Journal of Applied Physics. ,vol. 58, pp. 4605- 4613 ,(1985) , 10.1063/1.336228
Keiji Maeda, Ikurou Umezu, Atomic microstructure and electronic properties of a‐SiNx:H deposited by radio frequency glow discharge Journal of Applied Physics. ,vol. 70, pp. 2745- 2754 ,(1991) , 10.1063/1.350352
Ikunori Kobayashi, Tetsu Ogawa, Sadayoshi Hotta, Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride Japanese Journal of Applied Physics. ,vol. 31, pp. 336- 342 ,(1992) , 10.1143/JJAP.31.336
E. C. Paloura, S. Logothetidis, S. Boultadakis, S. Ves, Comparative study of the properties of ultrathin Si3N4 films with Auger electron spectroscopy, spectroscopic ellipsometry, and Raman spectroscopy Applied Physics Letters. ,vol. 59, pp. 280- 282 ,(1991) , 10.1063/1.105621
Yue Kuo, Etch mechanism in the low refractive index silicon nitride plasma-enhanced chemical vapor deposition process Applied Physics Letters. ,vol. 63, pp. 144- 146 ,(1993) , 10.1063/1.110380
D. V. Tsu, G. Lucovsky, Silicon nitride and silicon diimide grown by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 4, pp. 480- 485 ,(1986) , 10.1116/1.573875
A. V. Gelatos, J. Kanicki, Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct? Applied Physics Letters. ,vol. 57, pp. 1197- 1199 ,(1990) , 10.1063/1.103484