Strong white and blue photoluminescence from silicon nanocrystals in SiNx grown by remote PECVD using SiCl4/NH3

作者: A Benami , G Santana , A Ortiz , A Ponce , D Romeu

DOI: 10.1088/0957-4484/18/15/155704

关键词: OptoelectronicsTransmission electron microscopyRemote plasmaAnalytical chemistryChemical vapor depositionPhotoluminescenceMaterials sciencePotential wellVolumetric flow ratePlasma-enhanced chemical vapor depositionPassivation

摘要: Strong white and blue photoluminescence (PL) from as-grown silicon nanocrystals (nc-Si) in SiNx films prepared by remote plasma enhanced chemical vapour deposition using SiCl4/NH3 mixtures is reported. The colour intensity of the PL could be controlled adjusting NH3 flow rate. Samples with emission were annealed at 1000 °C, obtaining a strong improvement colour. can attributed to quantum confinement effect nc-Si embedded matrix, which improved when better passivation surface chlorine nitrogen atoms obtained. size, density structure confirmed measured high-resolution transmission electron microscopy.

参考文章(36)
M. Bedjaoui, B. Despax, M. Caumont, C. Bonafos, Post-annealed silicon nanocrystal formation on substoichiometric SiOxNy (x < 2, y < 1) layers deposited in SiH4-N2O radiofrequency discharges European Physical Journal-applied Physics. ,vol. 34, pp. 147- 150 ,(2006) , 10.1051/EPJAP:2006050
L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, F. Priolo, Optical gain in silicon nanocrystals Nature. ,vol. 408, pp. 440- 444 ,(2000) , 10.1038/35044012
Aaron Puzder, A. J. Williamson, Jeffrey C. Grossman, Giulia Galli, Surface Chemistry of Silicon Nanoclusters Physical Review Letters. ,vol. 88, pp. 097401- ,(2002) , 10.1103/PHYSREVLETT.88.097401
Sandeep Kohli, Jeremy A Theil, Patricia C Dippo, KM Jones, Mowafak M Al-Jassim, Richard K Ahrenkiel, Christopher D Rithner, Peter K Dorhout, None, Nanocrystal formation in annealed a-SiO0.17N0.07:H films Nanotechnology. ,vol. 15, pp. 1831- 1836 ,(2004) , 10.1088/0957-4484/15/12/024
B.M. Monroy, G. Santana, J. Aguilar-Hernández, A. Benami, J. Fandiño, A. Ponce, G. Contreras-Puente, A. Ortiz, J.C. Alonso, Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition Journal of Luminescence. ,vol. 121, pp. 349- 352 ,(2006) , 10.1016/J.JLUMIN.2006.08.046
M. J. Chen, J. L. Yen, J. Y. Li, J. F. Chang, S. C. Tsai, C. S. Tsai, Stimulated emission in a nanostructured silicon pn junction diode using current injection Applied Physics Letters. ,vol. 84, pp. 2163- 2165 ,(2004) , 10.1063/1.1687458
A. R. Wilkinson, R. G. Elliman, The effect of annealing environment on the luminescence of silicon nanocrystals in silica Journal of Applied Physics. ,vol. 96, pp. 4018- 4020 ,(2004) , 10.1063/1.1789265
G. Santana, J. Fandiño, A. Ortiz, J.C. Alonso, Low temperature–low hydrogen content silicon nitrides thin films deposited by PECVD using dichlorosilane and ammonia mixtures Journal of Non-Crystalline Solids. ,vol. 351, pp. 922- 928 ,(2005) , 10.1016/J.JNONCRYSOL.2005.02.007