The effect of annealing environment on the luminescence of silicon nanocrystals in silica
作者： A. R. Wilkinson , R. G. Elliman
DOI: 10.1063/1.1789265
关键词:
摘要: The effect of annealing environment on the photoluminescence from silicon nanocrystals synthesized in fused silica by ion implantation and thermal is examined as a function temperature time. choice (Ar, N2, or 5%H2 N2) found to affect shape intensity luminescence emission spectra, an that attributed both variations nanocrystal size defect states at nanocrystal/oxide interface. This supported Raman spectroscopy.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(18)
M. L. Green, T. Sorsch, L. C. Feldman, W. N. Lennard, E. P. Gusev, E. Garfunkel, H. C. Lu, T. Gustafsson, Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760–1050 °C Applied Physics Letters. ,vol. 71, pp. 2978- 2980 ,(1997) , 10.1063/1.120235
G. H. Li, K. Ding, Y. Chen, H. X. Han, Z. P. Wang, Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films Journal of Applied Physics. ,vol. 88, pp. 1439- 1442 ,(2000) , 10.1063/1.373836
S. I. Raider, R. A. Gdula, J. R. Petrak, Nitrogen reaction at a silicon–silicon dioxide interface Applied Physics Letters. ,vol. 27, pp. 150- 152 ,(1975) , 10.1063/1.88389
S. Cheylan, R. G. Elliman, Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2 Applied Physics Letters. ,vol. 78, pp. 1912- 1914 ,(2001) , 10.1063/1.1357450
E. Neufeld, S. Wang, R. Apetz, Ch. Buchal, R. Carius, C.W. White, D.K. Thomas, Effect of annealing and H2 passivation on the photoluminescence of Si nanocrystals in SiO2 Thin Solid Films. ,vol. 294, pp. 238- 241 ,(1997) , 10.1016/S0040-6090(96)09265-6
A. R. Wilkinson, R. G. Elliman, Kinetics of H 2 Passivation of Si Nanocrystals in SiO 2 Physical Review B. ,vol. 68, pp. 155302- ,(2003) , 10.1103/PHYSREVB.68.155302
Sorab Khushro Ghandhi, VLSI fabrication principles : silicon and gallium arsenide Wiley. ,(1994)
Saravanapriyan Sriraman, Sumit Agarwal, Eray S. Aydil, Dimitrios Maroudas, Mechanism of hydrogen-induced crystallization of amorphous silicon Nature. ,vol. 418, pp. 62- 65 ,(2002) , 10.1038/NATURE00866
M. Revitz, S. I. Raider, R. A. Gdula, Effect of high‐temperature, postoxidation annealing on the electrical properties of the Si–SiO2 interface Journal of Vacuum Science and Technology. ,vol. 16, pp. 345- 347 ,(1979) , 10.1116/1.569946
A. Stesmans, Influence of interface relaxation on passivation kinetics in H2 of coordination Pb defects at the (111)Si/SiO2 interface revealed by electron spin resonance Journal of Applied Physics. ,vol. 92, pp. 1317- 1328 ,(2002) , 10.1063/1.1482427