Microstructure, mechanical properties and wetting behavior of F: Si–C–N films as bio-mechanical coating grown by DC unbalanced magnetron sputtering

作者: Zhifeng Shi , Yingjun Wang , Nan Huang , Chengyun Ning , Lin Wang

DOI: 10.1016/J.JALLCOM.2012.08.012

关键词:

摘要: Abstract A systematic structure and properties investigation on the deposition of fluorinated silicon–carbon–nitride (Si–C–N) films under varying CF 4 flows was carried out by direct current unbalanced magnetron sputtering techniques. Significant role fluorine carbon-doped growth characteristics mechanical in film observed. The chemical bonding configurations, surface topography were characterized means X-ray photoelectron spectroscopy (XPS), Raman infrared spectroscopies, atomic force microscopy (AFM) nano-indentation technique CSM pin-on-disk tribometer. It found that as-deposited F: Si–C–N are amphipathic nature, large variations took place these films’ rate, composition, microstructure when varied from 0 to 9 sccm. At gas flow rate 9 sccm, coatings demonstrated a content 5.95 at.% moderate friction coefficient 0.03. is obvious hardness results coating enhances Co–Cr–Mo alloy approximately 16.3 GPa smoother surface. tribological characterization with sliding against ultrahigh molecular weight polyethylene (UHMWPE) counter-surface fetal bovine serum, shows wear resistance coated alloy/UHMWPE pair show much obviously improvement over uncoated pair. Si–N have potential for joint modification applications.

参考文章(32)
Young-Bae Park, Shi-Woo Rhee, Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition Journal of Materials Science: Materials in Electronics. ,vol. 12, pp. 515- 522 ,(2001) , 10.1023/A:1012449425744
M.P. Tsang, C.W. Ong, C.L. Choy, P.K. Lim, W.W. Hung, Correlation between the composition, structure and properties of dual ion beam deposited SiNx films Thin Solid Films. ,vol. 424, pp. 143- 147 ,(2003) , 10.1016/S0040-6090(02)00916-1
M. C. Hugon, F. Delmotte, B. Agius, J. L. Courant, Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 15, pp. 3143- 3153 ,(1997) , 10.1116/1.580859
Y Gao, J Wei, DH Zhang, ZQ Mo, P Hing, X Shi, None, Effects of nitrogen fraction on the structure of amorphous silicon–carbon–nitrogen alloys Thin Solid Films. ,vol. 377-378, pp. 562- 566 ,(2000) , 10.1016/S0040-6090(00)01292-X
J. Fandiño, G. Santana, L. Rodríguez-Fernández, J. C. Cheang-Wong, A. Ortiz, J. C. Alonso, Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using SiF4∕N2∕H2 mixtures Journal of Vacuum Science and Technology. ,vol. 23, pp. 248- 255 ,(2005) , 10.1116/1.1854693
T.A. Stolarski, Modern Tribology Handbook Tribology International. ,vol. 36, pp. 559- 560 ,(2003) , 10.1016/S0301-679X(02)00259-1
Shizuo Fujita, Hideo Toyoshima, Toshiyuki Ohishi, Akio Sasaki, Plasma-Deposited Silicon Nitride Films from SiF2as Silicon Source Japanese Journal of Applied Physics. ,vol. 23, pp. L268- L270 ,(1984) , 10.1143/JJAP.23.L268
Seok-Min Yun, Hong-Young Chang, Min-Sung Kang, Chi-Kyu Choi, Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor Thin Solid Films. ,vol. 341, pp. 109- 111 ,(1999) , 10.1016/S0257-8972(98)00781-6
G. Viera, J.L. Andújar, S.N. Sharma, E. Bertran, Nanopowder of silicon nitride produced in radio frequency modulated glow discharges from SiH4 and NH3 Surface and Coatings Technology. ,vol. 100-101, pp. 55- 58 ,(1998) , 10.1016/S0257-8972(97)00587-2