Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

摘要: The present article reports a study of current–voltage (J–E) and capacitance–voltage (C–V) measurements on metal–insulator–semiconductor diodes, using SiNx:H as an insulator layer Si or InP semiconductors. We have deposited films by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition at floating temperature, with physical properties similar to prepared 800 °C low pressure deposition. Silane nitrogen were used the reactive gases. experimental results show that resistivity (ρ) critical field (EC) are strong function dielectric composition. For under optimum conditions, ρ was equal 1016 Ω cm EC reached 3.65 4.5 MV/cm for Al/SiNx:H/Si Al/SiNx:H/InP respectively. dominant mode electronic conduction appears be Poole–Frenkel emission. postmetallization annealing (PMA) has no significant effect these bulk (ρ, conduction). On...