The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
作者： Jaeseob Lee , Jin-Seong Park , Young Shin Pyo , Dong Bum Lee , Eun Hyun Kim
DOI: 10.1063/1.3232179
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摘要: We investigated the threshold voltage ( V th ) instability for various gate dielectrics ( SiN x and SiO x ) in amorphous indium-gallium-zinc oxide ( a -IGZO) thin film transistors (TFTs). The …
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